Launch · 6 Oct 2026 · Company announcement

Renesas launches first low-voltage GaN transistors, naming humanoid robotics as a target

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The four 100V devices are aimed at AI data centres and robotics; the company claims 40 to 70 per cent lower switching losses.

Renesas announced its first low-voltage gallium nitride (GaN) FETs on 6 October. The 100V enhancement-mode devices are the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC.

The company lists AI data centres, humanoid robotics and industrial motor drives among the intended uses. It claims a 40 to 70 per cent cut in switching losses and 1 to 3 per cent higher efficiency than silicon-based designs.

Renesas also claims up to 35 per cent lower hard-switching and up to 63 per cent lower soft-switching figures of merit than comparable GaN devices. It says the devices and evaluation boards are available now.

No robot maker is named as a customer, so this is a component launch, not a design win.

Sources

Renesas (press release)
IT之家 (secondary)

Written by the RankedRobot news desk (AI-assisted, human-reviewed) from the sources above; checked 2026-10-08. Claims are attributed to whoever makes them. Spotted an error? corrections@rankedrobot.com